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GD50PIX65C5S bảng dữ liệu(PDF) 5 Page - StarPower Europe AG

tên linh kiện GD50PIX65C5S
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GD50PIX65C5S bảng dữ liệu(HTML) 5 Page - StarPower Europe AG

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GD50PIX65C5S
IGBT Module
©2018 STARPOWER Semiconductor Ltd.
2/9/2018
5/13
Preliminary
IGBT-brake Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCE(sat)
Collector to Emitter
Saturation Voltage
IC=30A,VGE=15V,
Tj=25
oC
1.45
1.90
V
IC=30A,VGE=15V,
Tj=125
oC
1.60
IC=30A,VGE=15V,
Tj=150
oC
1.70
VGE(th)
Gate-Emitter Threshold
Voltage
IC=0.48mA,VCE=VGE,
Tj=25
oC
5.1
5.8
6.5
V
ICES
Collector Cut-Off
Current
VCE=VCES,VGE=0V,
Tj=25
oC
1.0
mA
IGES
Gate-Emitter Leakage
Current
VGE=VGES,VCE=0V,
Tj=25
oC
400
nA
RGint
Internal Gate Resistance
0
Ω
Cies
Input Capacitance
VCE=25V,f=1MHz,
VGE=0V
3.48
nF
Cres
Reverse Transfer
Capacitance
0.07
nF
QG
Gate Charge
VGE=-15…+15V
0.21
μC
td(on)
Turn-On Delay Time
VCC=300V,IC=30A,
RG=15
Ω,V
GE=±15V,
Tj=25
oC
20
ns
tr
Rise Time
16
ns
td(off)
Turn-Off Delay Time
112
ns
tf
Fall Time
36
ns
Eon
Turn-On Switching
Loss
0.50
mJ
Eoff
Turn-Off Switching
Loss
0.50
mJ
td(on)
Turn-On Delay Time
VCC=300V,IC=30A,
RG=15
Ω,V
GE=±15V,
Tj=125
oC
20
ns
tr
Rise Time
21
ns
td(off)
Turn-Off Delay Time
128
ns
tf
Fall Time
48
ns
Eon
Turn-On Switching
Loss
0.65
mJ
Eoff
Turn-Off Switching
Loss
0.60
mJ
td(on)
Turn-On Delay Time
VCC=300V,IC=30A,
RG=15
Ω,V
GE=±15V,
Tj=150
oC
20
ns
tr
Rise Time
22
ns
td(off)
Turn-Off Delay Time
144
ns
tf
Fall Time
52
ns
Eon
Turn-On Switching
Loss
0.75
mJ
Eoff
Turn-Off Switching
Loss
0.64
mJ
ISC
SC Data
tP
≤6μs,V
GE=15V,
Tj=150
oC,V
CC=360V,
VCEM
≤650V
150
A



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