GD20FSX65L4S datasheet(4/9 Pages) STARPOWER

4 / 9 page

GD20FSX65L4S

IGBT Module

10/29/2018

4/9

Preliminary

Diode Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Diode Forward

Voltage

IC=20A,VGE=0V,Tj=25

1.60

2.05

IC=20A,VGE=0V,Tj=125

1.55

IC=20A,VGE=0V,Tj=150

1.50

Recovered Charge

VR=300V,IF=20A,

-di/dt=1800A/

μs,V

GE=-15V

Tj=25

1.00

μC

IRM

Peak Reverse

Recovery Current

30.0

Erec

Reverse Recovery

Energy

0.21

Recovered Charge

VR=300V,IF=20A,

-di/dt=1800A/

μs,V

GE=-15V

Tj=125

1.75

μC

IRM

Peak Reverse

Recovery Current

32.0

Erec

Reverse Recovery

Energy

0.37

Recovered Charge

VR=300V,IF=20A,

-di/dt=1800A/

μs,V

GE=-15V

Tj=150

2.20

μC

IRM

Peak Reverse

Recovery Current

34.0

Erec

Reverse Recovery

Energy

0.47

Module Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

RCC’+EE’

Module Lead Resistance,Terminal to Chip

9.50

RthJC

Junction-to-Case (per IGBT-inverter)

Junction-to-Case (per Diode-inverter)

1.445

2.091

1.589

2.300

K/W

RthCH

Case-to-Heatsink (per IGBT-inverter)

Case-to-Heatsink (per Diode-inverter)

Case-to-Heatsink (per Module)

0.781

1.131

0.077

K/W

Mounting Force Per Clamp

Weight of Module

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