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TXB0101DBVT bảng dữ liệu(PDF) 9 Page - Texas Instruments

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tên linh kiện TXB0101DBVT
Giải thích chi tiết về linh kiện  1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO DIRECTION SENSING AND 짹15-kV ESD PROTECTION
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TXB0101DBVT bảng dữ liệu(HTML) 9 Page - Texas Instruments

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PRINCIPLES OF OPERATION
Applications
Architecture
4k
4k
A
B
VCCA
VCCB
One
Shot
One
Shot
One
Shot
One
Shot
T1
T2
T3
T4
Input Driver Requirements
TXB0101
1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR
WITH AUTO DIRECTION SENSING AND
±15-kV ESD PROTECTION
SCES639 – JANUARY 2007
The TXB0101 can be used in level-translation applications for interfacing devices or systems operating at
different interface voltages with one another.
The TXB0101 architecture (see Figure 1) does not require a direction-control signal to control the direction of
data flow from A to B or from B to A. In a dc state, the output drivers of the TXB0101 can maintain a high or low,
but are designed to be weak, so that they can be overdriven by an external driver when data on the bus starts
flowing the opposite direction.
The output one shots detect rising or falling edges on the A or B ports. During a rising edge, the one shot turns
on the PMOS transistors (T1, T3) for a short duration, which speeds up the low-to-high transition. Similarly,
during a falling edge, the one shot turns on the NMOS transistors (T2, T4) for a short duration, which speeds up
the high-to-low transition. The typical output impedance during output transition is 70
Ω at V
CCO = 1.2 V to 1.8 V,
50
Ω at V
CCO = 1.8 V to 3.3 V, and 40 Ω at VCCO = 3.3 V to 5 V.
Figure 1. Architecture of TXB0101 I/O Cell
Typical IIN vs VIN characteristics of the TXB0101 are shown in Figure 2. For proper operation, the device driving
the data I/Os of the TXB0101 must have drive strength of at least
±2 mA.
9
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