Feb.1999

IXe

Vtrig

IGBT

+

Vtrig

Ixe

RECOMMEND CONDITION

µF

MAXIMUM CONDITION

350V

150A

400

µF

200

160

120

80

40

0

50

40

30

10

0

20

µF

<

<

–

MAXIMUM PULSE COLLECTOR CURRENT

TRIGGER

SIGNAL

Xe TUBE

CURRENT

VOLTAGE

IGBT GATE

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

CT25AS-8

STROBE FLASHER USE

PERFORMANCE CURVES

APPLICATION EXAMPLE

Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.

And reverse gate current during turn-off must be kept less than 1A.

≥ 30Ω)

Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.

So please handle carefully not to suffer from electrostatic charge.

Notice 3. The operation life should be endured 5,000 shots under the charge current

Repetition period under full luminescence condition is over 3 seconds.

Notice 4. Total operation hours must be applied within 5,000 hours.

Figure 1