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RT8012APQW bảng dữ liệu(PDF) 13 Page - Richtek Technology Corporation |
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RT8012APQW bảng dữ liệu(HTML) 13 Page - Richtek Technology Corporation |
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13 / 14 page ![]() RT8012A 13 DS8012A-01 March 2007 www.richtek.com Preliminary through inductor L is “chopped” between the main switch and the synchronous switch. Thus, the series resistance looking into the LX pin is a function of both top and bottom MOSFET RDS(ON) and the duty cycle (DC) as follows : RSW = RDS(ON)TOP x DC + RDS(ON)BOT x (1 −DC) The RDS(ON) for both the top and bottom MOSFETs can be obtained from the Typical Performance Characteristics curves. Thus, to obtain I2R losses, simply add RSW to RL and multiply the result by the square of the average output current. Other losses including CIN and COUT ESR dissipative losses and inductor core losses generally account for less than 2% of the total loss. Checking Transient Response The regulator loop response can be checked by looking at the load transient response. Switching regulators take several cycles to respond to a step in load current. When a load step occurs, VOUT immediately shifts by an amount equal to ΔILOAD (ESR), where ESR is the effective series resistance of COUT. ΔILOAD also begins to charge or discharge COUT generating a feedback error signal used by the regulator to return VOUT to its steady-state value. During this recovery time, VOUT can be monitored for overshoot or ringing that would indicate a stability problem. Thermal Considerations For continuous operation, do not exceed the maximum operation junction temperature 125 °C. The maximum power dissipation depends on the thermal resistance of IC package, PCB layout, the rate of surroundings airflow and temperature differential between junction to ambient. The maximum power dissipation can be calculated by following formula : PD(MAX) = ( TJ(MAX) - TA ) / θJA Where TJ(MAX) is the maximum operation junction temperature 125 °C, TAis the ambient temperature and the θJA is the junction to ambient thermal resistance. For recommended operating conditions specification of RT8012A, where TJ(MAX) is the maximum junction temperature of the die (125 °C) and TA is the maximum ambient temperature. The junction to ambient thermal resistance θJA is layout dependent. For WQFN-16L 4x4 packages, the thermal resistance θJA is 54°C/W on the standard JEDEC 51-7 four-layers thermal test board. The maximum power dissipation at TA= 25 °C can be calculated by following formula : PD(MAX) = ( 125 °C − 25°C) / 54°C/W = 1.852W for WQFN-16L 4x4 packages The maximum power dissipation depends on operating ambient temperature for fixed TJ(MAX) and thermal resistance θJA. For RT8012A packages, the Figure 4 of derating curves allows the designer to see the effect of rising ambient temperature on the maximum power allowed. Figure 4. Derating Curves for RT8012A Packages 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 75 100 125 Temperature (°C) WQFN 16L 4x4 Four Layers PCB Layout Considerations Follow the PCB layout guidelines for optimal performance of RT8012A. Keep the traces of the main current paths as short and wide as possible. Put the input capacitor as close as possible to the device pins (VIN and GND). LX node is with high frequency voltage swing and should be kept small area. Keep analog components away from LX node to prevent stray capacitive noise pick-up. Connect feedback network behind the output capacitors. Keep the loop area small. Place the feedback components near the RT8012A. Connect all analog grounds to a command node and then connect the command node to the power ground behind the output capacitors. |
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