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EN25P40-75VIP bảng dữ liệu(PDF) 31 Page - Eon Silicon Solution Inc. |
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EN25P40-75VIP bảng dữ liệu(HTML) 31 Page - Eon Silicon Solution Inc. |
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31 / 31 page ![]() This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications. 31 EN25P40 Rev. D, Issue Date: 2006/12/25 Revisions List Revision No Description Date A Advance Information 2005/12/20 B 1. Initial release 2. Correct OP-code of Read Manufacturer / Device ID At page 19 2006/03/24 C 1. Add op-code: 9Fh and its description 2. Add 3 specific op-codes to IDs in Table 5 of page 8 3. Change note 5 description in page 8 4. Change the description of FEATURES in page 1 (1)change byte program time from 8 to 7µs, (2) add page program time: 1.4ms, (3) change sector erase time from 500ms to 300 ms, (4) change chip erase time from 4 sec to 2.4 sec in page 1, 5. Change Table 10 AC Characteristics in page 22 (1)change Data In Setup Time from 5ns to 2ns, (2)change sector erase time from 0.5 sec to 0.3 sec typical, (3) change sector erase time from 1 sec to 0.6 sec max, (4)change bulk erase time from 4 sec to 2.4 sec typical (5)change bulk erase time from 8 sec to 4.8 sec max in Table 6. Change ICC1, ICC2 in Table 8 from 10µA to 20µA 7. Add INSTRUCTIONS description in page 8 2006/08/04 D 1. Change clock rate from 50MHz to 75MHz, Page program time 1.4 ms typical to 1.5 ms typical Sector erase time 300 ms typical to 800 ms Chip erase time 2.4 seconds to 5 seconds typical in page 1 2. Change Table 8 DC Characteristics in page 21 (1) Add ICC3 for 75MHz 3. Change Table 10 to 75MHz AC Characteristics in page 22 (1) Change F R from 50 to 75MHz (2) Change f R from 33 to 50MHz (3) Change t CLH from 9ns to 6ns (4) Change t CLL from 9ns to 6ns (5) Change t SHQZ from 9ns to 6ns (6) Change t HLQZ from 9ns to 6ns (7) Change t HHQZ from 9ns to 6ns (8) Change t CLQV from 9ns to 6ns (9) Change Page program time 1.4ms typical to 1.5ms (10) Change Sector erase time 0.3 / 0.6 seconds to 0.8 / 2 seconds for typical and maximum (11)Change Chip erase time 2.4 / 4.8 seconds to 5 / 10 seconds for typical and maximum 4. Add Table 11: 50MHz AC Characteristics in page 23 (1) Change Page program time 1.4ms typical to 1.5ms (2) Change Sector erase time 0.3 / 0.6 seconds to 0.8 / 2 seconds for typical and maximum (3) Change Chip erase time 2.4 / 4.8 seconds to 5 / 10 seconds for typical and maximum 5. Add 75MHz option in Ordering Information in page 30 2006/12/25 |
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