BAT93 datasheet(3/8 Pages) PHILIPS

3 / 8 page

December 1993

Philips Semiconductors

Product speciﬁcation

Schottky barrier diode

BAT93

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL RESISTANCE

Note

1. Printed-circuit board mounting (SOD123 standard conditions).

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

Note

1. Pulsed test: tp = 300 µs; δ = 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

continuous forward current

−

200

IFRM

repetitive peak forward current

tp ≤ 1 s; δ≤ 0.5

−

300

IFSM

non-repetitive peak forward

current

tp < 10 ms

−

600

Ptot

total power dissipation

Tamb ≤ 25°C

−

250

Tstg

storage temperature

−65

+150

°C

Tamb

operating ambient temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

THERMAL RESISTANCE

Rth j-a

from junction to ambient; note 1

500 K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

forward voltage

IF = 0.1 mA

−

240

IF = 1 mA

−

320

IF = 10 mA

−

400

IF = 30 mA

−

500

IF = 100 mA

−

800

V(BR)R

reverse breakdown voltage

IR = 10 µA30

−

reverse current

VR = 25 V; note 1

−

µA

diode capacitance

VR = 1 V; f = 1 MHz

−

trr

reverse recovery time

when switched from IF = 10 mA

to IR = 10 mA; RL = 100 Ω;

measured at IR = 1 mA

−

5ns

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