8-13

8

BV

DGX

(max)

(min)

TO-92

Die

400V

6.0Ω

300mA

DN2640N3

DN2640ND

N-Channel Depletion-Mode

Vertical DMOS FETs

DN2640

Advanced DMOS Technology

These depletion-mode (normally-on) transistors utilize an ad-

vanced vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transis-

tors and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Ordering Information

Preliminary

Features

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Applications

Normally-on switches

Solid state relays

Converters

Linear amplifiers

Constant current sources

Power supply circuits

Telecom

Absolute Maximum Ratings

Drain-to-Source Voltage

BV

DSX

Drain-to-Gate Voltage

Gate-to-Source Voltage

± 20V

Operating and Storage Temperature

-55°C to +150°C

Soldering Temperature*

300°C

Order Number / Package

Package Options

TO-92

Note: See Package Outline section for dimensions.

S G D

– OBSOLETE

–