TLP705

2004-10-19

1

Unit in mm

TOSHIBA

11-5J1

Weight：0.26 g (typ.)

4.58±0.25

10.0max

0.4±0.1

1.27±0.2

1.25±0.25

7.62±0.25

1 2 3

6 5 4

11-5J1

TOSHIBA Photocoupler GaAℓAs IRED + Photo IC

TLP705

Plasma Display Panel.

Industrial Inverter

IGBT/Power MOS FET Gate Drive

The TOSHIBA TLP705 consists of a GaAℓAs light emitting diode and a

integrated photodetector.

This unit is 6-lead SDIP package. TLP705 is 50% smaller than 8PIN DIP

and has suited the safety standard reinforced insulation class.

So mounting area in safety standard required equipment can be reduced.

TLP705 is suitable for gate driving circuit of IGBT or power MOS FET.

Especially TLP705 is capable of “direct” gate drive of lowr Power IGBTs.

• Peak output current

: ±0.45 A (max)

• Operating frequency

: 250kHz (max)

• Guaranteed performance over temperature : −40 to 100°C

• Supply current

: 3mA (max)

• Power supply voltage

: 10 to 20 V

• Threshold input current

: 200 ns (max)

• Common mode transient immunity

: 10 kV/µs

• Isolation voltage

: 5000 Vrms

• UL Recognized

:UL1577, File No.E67349

• Construction Mechanical Rating

7.62 mm pich

standard type

10.16 mm pich

TLPXXXF type

Creepage Distance

Clearance

Insulation Thickness

7.0 mm (Min)

7.0 mm (Min)

0.4 mm (Min)

8.0 mm (Min)

8.0 mm (Min)

0.4 mm (Min)

Truth Table

Input

LED

Tr1

Tr2

Output

H

ON

ON

OFF

H

L

OFF

OFF

ON

L

Schematic

Preliminary

A 0.1

µF bypass capacitor must be connected

between pin 6 and 4. (See Note 6)

1: Anode

2: NC

3: Cathode

4: GND

1

3

4

5

6

2

SHIELD

1

+

3

−

GND

(Tr1)

(Tr2)

6

5

4

SHIELD