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MBR230LSFT1 bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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MBR230LSFT1 bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() MBR230LSFT1 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (At Rated VR, TL = 105°C) IO 2.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TL = 95°C) IFRM 4.0 A Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 40 A Storage Temperature Tstg -55 to 150 °C Operating Junction Temperature TJ -55 to 125 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/ ms THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Lead (Note 1) Thermal Resistance, Junction-to-Lead (Note 2) Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Resistance, Junction-to-Ambient (Note 2) Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) VF TJ = 25°C TJ = 100°C V (IF = 1.0 A) (IF = 2.0 A) 0.38 0.43 0.30 0.37 Maximum Instantaneous Reverse Current (Note 3) IR TJ = 25°C TJ = 100°C mA (VR = 30 V) 1.0 25 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. |
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