MMBTA55 datasheet(2/2 Pages) DIOTEC

tên linh kiện	MMBTA55

Giải thích chi tiết về linh kiện	General Purpose Si-Epitaxial PlanarTransistors

PDF	2 Pages

Scroll/Zoom	100%

nhà sản xuất	DIOTEC [Diotec Semiconductor]

Trang chủ	http://www.diotec.com

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2 / 2 page

MMBTA55 ... MMBTA56

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 60 V, (E open)

- VCB = 80 V, (E open)

MMBTA55

MMBTA56

- ICBO

–

100 nA

Emitter-Base cutoff current – Emitter-Basis-Reststrom

- VEB = 4 V, (C open)

- IEB0

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

- IC = 100 mA, - VCE = 1 V, f = 100 MHz

50 MHz

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 420 K/W 1)

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

MMBTA05, MMBTA06

Marking - Stempelung

MMBTA55 = 2H

MMBTA56 = 2G(M)

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

[%]

tot

120

100

[°C]

150

100

Power dissipation versus ambient temperature )

Verlustleistung in Abh. von d. Umgebungstemp. )

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