MMBTA06 datasheet(1/2 Pages) DIOTEC

tên linh kiện	MMBTA06

Giải thích chi tiết về linh kiện	Surface mount general purpose Si-epitaxial planar transistors

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nhà sản xuất	DIOTEC [Diotec Semiconductor]

Trang chủ	http://www.diotec.com

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MMBTA05 / MMBTA06

NPN

Surface mount general purpose Si-epitaxial planar transistors

Vielzweck Si-Epitaxial Planar-Transistoren für die Oberflächenmontage

NPN

Version 2007-06-25

Dimensions / Maße [mm]

1 = B

2 = E

3 = C

Power dissipation

Verlustleistung

250 mW

Plastic case

Kunststoffgehäuse

SOT-23

(TO-236)

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (TA = 25°C)

Grenzwerte (TA = 25°C)

MMBTA05

MMBTA06

Collector-Emitter-volt. - Kollektor-Emitter-Spannung

B open

VCEO

60 V

80 V

Collector-Base-voltage - Kollektor-Basis-Spannung

E open

VCBO

60 V

80 V

Emitter-Base-voltage - Emitter-Basis-Spannung

C open

VEBO

4 V

Power dissipation – Verlustleistung

Ptot

250 mW 1)

Collector current – Kollektorstrom (dc)

IC

500 mA

Base current – Basisstrom

I

B

100 mA

Peak Base current – Basis-Spitzenstrom

IBM

200 mA

Junction temperature – Sperrschichttemperatur

Tj

-55...+150°C

Storage temperature – Lagerungstemperatur

TS

-55…+150°C

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Base cutoff current – Kollektorreststrom

IE = 0, VCB = 60 V

IE = 0, VCB = 80 V

MMBTA05

MMBTA06

ICB0

–

100 nA

Emitter-Base cutoff current – Emitterreststrom

IC = 0, VEB = 4 V

IEB0

–

100 nA

Collector saturation voltage – Kollektor-Sättigungsspannung 2)

IC = 100 mA, IB = 10 mA

VCEsat

–

250 mV

Base saturation voltage – Basis-Sättigungsspannung 2)

IC = 100 mA, IB = 10 mA

VBEsat

–

1.2 V

1

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

1

1.1

2.9 ±0.1

0.4

1

2

3

Type

Code

1.9

Số phần tương tự - MMBTA06

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Transys Electronics	MMBTA06	139Kb / 1P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Samsung semiconductor	MMBTA06	28Kb / 1P	NPN (DRIVER TRANSISTOR)
Fairchild Semiconductor	MMBTA06	149Kb / 4P	NPN General Purpose Amplifier
Diodes Incorporated	MMBTA06	45Kb / 2P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30037 Rev. C-2
General Semiconductor	MMBTA06	56Kb / 2P	Small Signal Transistors (NPN)

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