STG3P3M25N60 datasheet(1/12 Pages) STMICROELECTRONICS

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PRELIMINARY DATA

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

May 2006

Rev1

1/12

12

■ N-channel very fast PowerMESH™ IGBT

■ Lower on-voltage drop (Vcesat)

■ Lower CRES / CIES ratio (no cross-conduction

susceptbility)

■ Very soft ultra fast recovery antiparallel diode

■ High frequency operation up to 70 KHz

■ New generation products with tighter

parameter distribution

■ One screw mounting

■ Compact design

■ Semitop®3 is a trademark of Semikron

Description

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

PowerMESH™ IGBT, with outstanding

performances.

Applications

■ High frequency inverters

■ Motor drivers

Internal schematic diagram

General features

Type

VCES

VCE(sat)(Max)

@ IC=7A,

Ts=25°C

IC@80°C

STG3P3M25N60

600V

< 2.5V

25A

SEMITOP®3

STG3P3M25N60

3 Phase inverter

IGBT - SEMITOP®3 module

www.st.com

Order codes

Sales Type

Marking

Package

Packaging

STG3P3M25N60

G3P3M25N60

SEMITOP®3

SEMIBOX

Số phần tương tự - STG3P3M25N60

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