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IRFP26N60LPBF bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRFP26N60LPBF bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFP26N60LPbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25°C, L = 1.7mH, RG = 25Ω, IAS = 26A, dv/dt = 21V/ns. (See Figure 12a) ISD ≤ 26A, di/dt ≤ 480A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff.(ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80% VDSS. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 600 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.33 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 210 250 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V IDSS Drain-to-Source Leakage Current ––– ––– 50 µA ––– ––– 2.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 0.8 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 13 ––– ––– S Qg Total Gate Charge ––– ––– 180 Qgs Gate-to-Source Charge ––– ––– 61 nC Qgd Gate-to-Drain ("Miller") Charge ––– ––– 85 td(on) Turn-On Delay Time ––– 31 ––– tr Rise Time ––– 110 ––– ns td(off) Turn-Off Delay Time ––– 47 ––– tf Fall Time ––– 42 ––– Ciss Input Capacitance ––– 5020 ––– Coss Output Capacitance ––– 450 ––– Crss Reverse Transfer Capacitance ––– 34 ––– pF Coss eff. Effective Output Capacitance ––– 230 ––– Coss eff. (ER) Effective Output Capacitance ––– 170 ––– (Energy Related) Avalanche Characteristics Symbol Parameter Typ. Units EAS Single Pulse Avalanche Energy d ––– mJ IAR Avalanche Current à ––– A EAR Repetitive Avalanche Energy ––– mJ Thermal Resistance Symbol Parameter Typ. Units RθJC Junction-to-Case ––– RθCS Case-to-Sink, Flat, Greased Surface 0.24 °C/W RθJA Junction-to-Ambient ––– 40 Max. 0.27 ––– VDS = 25V ƒ = 1.0MHz, See Fig. 5 26 47 Max. 570 VGS = 0V,VDS = 0V to 480V g ID = 26A RG = 4.3Ω VGS = 10V, See Fig. 11a & 11b f VGS = 0V ID = 26A VDS = 480V VGS = 10V, See Fig. 7 & 15 f VDD = 300V VGS = 30V f = 1MHz, open drain Conditions VDS = 50V, ID = 16A VGS = -30V VDS = VGS, ID = 250µA VDS = 600V, VGS = 0V VDS = 480V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 16A f |
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