ARF462 FAST RECOVERY DIODE

TARGET SPECIFICATION giu 00 - ISSUE : 02

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FORWARD CHARACTERISTIC

Tj = 125 °C

0

200

400

600

800

1000

1200

2.6

3.1

3.6

4.1

4.6

5.1

Forward Voltage [V]

TRANSIENT THERMAL IMPEDANCE

DOUBLE SIDE COOLED

0.0

5.0

10.0

15.0

20.0

25.0

30.0

35.0

40.0

0.001

0.01

0.1

1

10

100

t[s]

SURGE CHARACTERISTIC

Tj = 125 °C

0

2

4

6

8

10

12

1

10

100

n° cycles

All the characteristics given in this data sheet are guaranteed only with uniform

clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and

roughness < 2 µm.

In the interest of product improvement ANSALDO reserves the right to change any

data given in this data sheet at any time without previous notice.

If not stated otherwise the maximum value of ratings (simbols over shaded

background) and characteristics is reported.

POSEICO SPA

POwer SEmiconductors Italian COrporation

POSEICO