BCP53 datasheet(1/2 Pages) DIOTEC

tên linh kiện	BCP53

Giải thích chi tiết về linh kiện	Surface Mount General Purpose Si-Epi-Planar Transistors

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nhà sản xuất	DIOTEC [Diotec Semiconductor]

Trang chủ	http://www.diotec.com

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BCP51 ... BCP53

PNP

Surface Mount General Purpose Si-Epi-Planar Transistors

Si-Epi-Planar Universaltransistoren für die Oberflächenmontage

PNP

Version 2006-06-26

Dimensions - Maße [mm]

1 = B

2/4 = C

3 = E

Power dissipation

Verlustleistung

1.3 W

Plastic case

Kunststoffgehäuse

SOT-223

Weight approx.

Gewicht ca.

0.04 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (TA = 25°C)

Grenzwerte (TA = 25°C)

BCP51

BCP52

BCP53

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

B open

- VCEO

45 V

60 V

80 V

Collector-Base-voltage – Kollektor-Basis-Spannung

E open

- VCBO

45 V

60 V

100 V

Collector-Base-voltage – Kollektor-Basis-Spannung

C open

- VEBO

5 V

Power dissipation – Verlustleistung

Ptot

1.3 W 1)

Collector current – Kollektorstrom (dc)

- IC

1 A

Peak Collector current – Kollektor-Spitzenstrom

- ICM

1.5 A

Peak Base current – Basis-Spitzenstrom

- IBM

200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-55...+150°C

-55…+150°C

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 2)

- VCE = 2 V, - IC = 5 mA

all groups

hFE

25

- VCE = 2 V, - IC = 150 mA

Group -6

Group -10

Group -16

hFE

40

63

100

–

100

160

250

- VCE = 2 V, - IC = 500 mA

all groups

hFE

25

–

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)

- IC = 500 mA, - IB = 50 mA

- VCEsat

–

0.5 V

Base-Emitter voltage – Basis-Emitter-Spannung 2)

- IC = 500 mA, - IB = 50 mA

- VBE

––

1 V

1

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

1

1.65

2.3

3.25

0.7

6.5

±0.2

3

±0.1

1

2

3

4

Type

Code

Số phần tương tự - BCP53

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	BCP53	44Kb / 8P	PNP medium power transistors 1999 Apr 08
STMicroelectronics	BCP53	71Kb / 4P	MEDIUM POWER AMPLIFIER Oct-1997
Zetex Semiconductors	BCP53	42Kb / 1P	PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Siemens Semiconductor G...	BCP53	140Kb / 5P	PNP Silicon AF Transistors (For AF driver and output stages High collector current)
Fairchild Semiconductor	BCP53	191Kb / 6P	PNP General Purpose Amplifier

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