BCW33 datasheet(2/2 Pages) DIOTEC

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BCW31 ... BCW33

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

–

750 mV

850 mV

–

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

IC = 2 mA, VCE = 5 V

VBE

550 mV

–

700 mV

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 30 V, (E open)

VCE = 30 V, Tj = 100°C, (E open)

ICB0

–

100 nA

10 µA

Emitter-Base cutoff current

VEB = 5 V, (C open)

IEB0

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

–

2.5 pF

6 pF

Noise figure – Rauschzahl

VCE = 5 V, IC = 200 µA, RG = 2 kΩ

f = 1 kHz, Δf = 200 Hz

–

10 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 420 K/W 1)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCW29, BCW30

Marking - Stempelung

BCW31 = D1

BCW32 = D2

BCW33 = D3

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

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