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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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IRFS52N15DTRLP bảng dữ liệu(PDF) 1 Page - International Rectifier |
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IRFS52N15DTRLP bảng dữ liệu(HTML) 1 Page - International Rectifier |
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1 / 12 page  Notes through are on page 11 www.irf.com 1 05/17/05 SMPS MOSFET HEXFET® Power MOSFET l High frequency DC-DC converters l Plasma Display Panel l Lead-Free Benefits Applications l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF D2Pak IRFS52N15DPbF TO-220AB IRFB52N15DPbF TO-262 IRFSL52N15DPbF PROVISIONAL * RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium. Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.47* RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient ––– 40 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 51* ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 36* A IDM Pulsed Drain Current 240 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 230* Linear Derating Factor 1.5* W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 5.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings VDS 150 V VDS (Avalanche) min. 200 V RDS(ON) max @ 10V 32 m : TJ max 175 °C Key Parameters PD - 97002 |
Số phần tương tự - IRFS52N15DTRLP |
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Mô tả tương tự - IRFS52N15DTRLP |
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