IRLL2705PBF datasheet(1/9 Pages) IRF

tên linh kiện	IRLL2705PBF

Giải thích chi tiết về linh kiện	HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.04廓 , ID = 3.8A )

PDF	9 Pages

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nhà sản xuất	IRF [International Rectifier]

Trang chủ	http://www.irf.com

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IRLL2705PbF

HEXFET® Power MOSFET

S

D

G

VDSS = 55V

RDS(on) = 0.04Ω

ID = 3.8A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application

05/28/04

Description

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Surface Mount

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Dynamic dv/dt Rating

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Logic-Level Gate Drive

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Fast Switching

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Ease of Paralleling

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Advanced Process Technology

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Ultra Low On-Resistance

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Lead-Free

SOT-223

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

Parameter

Typ.

Max.

Units

RθJA

Junction-to-Amb. (PCB Mount, steady state)*

93

120

RθJA

Junction-to-Amb. (PCB Mount, steady state)**

48

60

Thermal Resistance

°C/W

Parameter

Max.

Units

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V**

5.2

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V*

3.8

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V*

3.0

IDM

Pulsed Drain Current

30

PD @TA = 25°C

Power Dissipation (PCB Mount)**

2.1

W

PD @TA = 25°C

Power Dissipation (PCB Mount)*

1.0

W

Linear Derating Factor (PCB Mount)*

8.3

mW/°C

VGS

Gate-to-Source Voltage

± 16

V

EAS

Single Pulse Avalanche Energy

110

mJ

IAR

Avalanche Current

3.8

A

EAR

Repetitive Avalanche Energy

0.10

mJ

dv/dt

Peak Diode Recovery dv/dt

7.5

V/ns

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

A

www.irf.com

1

PD- 95338

Số phần tương tự - IRLL2705PBF

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRLL2705PBF	231Kb / 9P	DYNAMIC DV/DT RATING
	IRLL2705PBF	225Kb / 9P	ADVANCED PROCESS TECHNOLOGY
	IRLL2705PBF	225Kb / 9P	ADVANCED PROCESS TECHNOLOGY

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRFR224	175Kb / 6P	Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A)
	IRFZ46N	190Kb / 9P	HEXFET짰 Power MOSFET(VDSS = 55V,RDS(on) = 16.5m廓,ID = 53A)
	IRLZ44ZPBF	362Kb / 13P	AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A)
	IRLZ34NSPBF	297Kb / 11P	HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035廓 , ID = 30A )
	IRF1405ZPBF	812Kb / 13P	AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )
	IRFR9024NPBF	1Mb / 11P	HEXFET POWER MOSFET ( VDSS = -55V , RDS(on) = 0.175廓 , ID = -11A )
	IRLR014NPBF	281Kb / 11P	HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.14廓 , ID = 10A )
	IRFR5305PBF	248Kb / 11P	HEXFET짰 Power MOSFET ( VDSS = -55V , RDS(on) = 0.065廓 , ID = -31A )
	IRFZ44ZPBF	291Kb / 13P	HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 13.9m廓 , ID = 51A )
	IRF1405ZS-7PPBF	696Kb / 12P	HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A )

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