BC817 datasheet(1/2 Pages) DIOTEC

tên linh kiện	BC817

Giải thích chi tiết về linh kiện	Surface Mount General Purpose Si-Epi-Planar Transistors

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BC817 / BC818

NPN

Surface Mount General Purpose Si-Epi-Planar Transistors

Si-Epi-Planar Universaltransistoren für die Oberflächenmontage

NPN

Version 2007-04-13

Dimensions - Maße [mm]

1 = B

2 = E

3 = C

Power dissipation – Verlustleistung

310 mW

Plastic case

Kunststoffgehäuse

SOT-23

(TO-236)

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (TA = 25°C)

Grenzwerte (TA = 25°C)

BC817

BC818

Collector-Emitter-volt. – Kollektor-Emitter-Spannung E-B short

VCES

50 V

30 V

Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open

VCEO

45 V

25 V

Emitter-Base-voltage – Emitter-Basis-Spannung

C open

VEBO

5 V

Power dissipation – Verlustleistung

Ptot

310 mW 1)

Collector current – Kollektorstrom (dc)

IC

800 mA

Peak Collector current – Kollektor-Spitzenstrom

ICM

1 A

Peak Emitter current – Emitter-Spitzenstrom

- IEM

1 A

Peak Base current – Basis-Spitzenstrom

IBM

200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-55...+150°C

-55…+150°C

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 2)

VCE = 1 V, IC = 100 mA

Group -16

Group -25

Group -40

hFE

100

160

250

–

250

400

630

VCE = 1 V, IC = 500 mA

all groups

hFE

40

–

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)

IC = 500 mA, IB = 50 mA

VCEsat

–

0.7 V

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)

IC = 500 mA, IB = 50 mA

VBEsat

–

1.3 V

1

Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

1

1.1

0.4

2.9 ±0.1

1

2

3

Type

Code

1.9

Số phần tương tự - BC817

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	BC817	47Kb / 8P	NPN general purpose transistor 1999 Jun 01
Transys Electronics	BC817	49Kb / 2P	NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Zetex Semiconductors	BC817	37Kb / 1P	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
Siemens Semiconductor G...	BC817	130Kb / 5P	NPN Silicon AF Transistors
Fairchild Semiconductor	BC817	31Kb / 2P	NPN EPITAXIAL SILICON TRANSISTOR

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