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Jun-29-2004
Dual N-Channel Enhancement Mode
Field Effect Transistor
P2103HVG
SOP-8
Lead-Free
NIKO-SEM
On-State Drain Current
1
ID(ON)
VDS = 5V, VGS = 10V
25
A
VGS = 4.5V, ID = 6A
21
35
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 10V, ID = 7A
15
21
mΩ
Forward Transconductance
1
gfs
VDS = 15V, ID = 5A
24
S
DYNAMIC
Input Capacitance
Ciss
1650
Output Capacitance
Coss
365
Reverse Transfer Capacitance
Crss
VGS = 0V, VDS = 15V, f = 1MHz
170
pF
Total Gate Charge
2
Qg
18
25
Gate-Source Charge
2
Qgs
5.5
Gate-Drain Charge
2
Qgd
VDS = 0.5V(BR)DSS, VGS = 5V,
ID = 7A
6.7
nC
Turn-On Delay Time
2
td(on)
11
20
Rise Time
2
tr
VDS = 15V
9
18
Turn-Off Delay Time
2
td(off)
ID ≅ 1A, VGS = 10V, RGEN = 6Ω
25
40
Fall Time
2
tf
11
20
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
1.3
Pulsed Current
3
ISM
2.5
A
Forward Voltage
1
VSD
IF = 1A, VGS = 0V
1.2
V
Reverse Recovery Time
trr
IF = 5A, dlF/dt = 100A / µS
15.5
nS
Reverse Recovery Charge
Qrr
7.9
1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P2103HVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
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