5 Specifications

5.1 Absolute Maximum Ratings

at 25°C free-air temperature (unless otherwise noted)(1)

MIN

MAX

UNIT

VCC

Collector-emitter voltage

50

V

Clamp diode reverse voltage(2)

50

V

VI

Input voltage(2)

30

V

Peak collector current, See Figure 5-4 and Figure 5-5

500

mA

IOK

Output clamp current

500

mA

Total emitter-terminal current

–2.5

A

TA

Operating free-air temperature range

ULN200xA

–40

70

°C

ULN200xAI

–40

105

ULQ200xA

–40

85

ULQ200xAT

–40

105

TJ

Operating virtual junction temperature

150

°C

Lead temperature for 1.6 mm (1/16 inch) from case for 10 seconds

260

°C

Tstg

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.

5.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged device model (CDM), per JEDEC specification JESD22-C101(2)

±500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VCC

Collector-emitter voltage (non-V devices)

0

50

V

TJ

Junction temperature

–40

125

°C

5.4 Thermal Information

THERMAL METRIC(1)

ULx200x

UNIT

D

(SOIC)

N

(PDIP)

NS

(SO)

PW

(TSSOP)

DYY

(SOT)

16 PINS

16 PINS

16 PINS

16 PINS

16 PINS

RθJA

Junction-to-ambient thermal resistance

88.6

66.7

95.0

114.1

123.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

50.1

54.2

53.3

50.3

59.6

°C/W

RθJB

Junction-to-board thermal resistance

49.8

46.7

57.2

59.3

56.5

°C/W

ψJT

Junction-to-top characterization parameter

12.4

33.7

19.6

9.7

3.2

°C/W

ψJB

Junction-to-board characterization parameter

49.3

46.4

56.8

58.9

56.0

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

ULN2002A, ULN2003A, ULN2003AI

ULQ2003A, ULN2004A, ULQ2004A

SLRS027S – DECEMBER 1976 – REVISED JUNE 2024

www.ti.com

4

Submit Document Feedback

Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: ULN2002A ULN2003A ULN2003AI ULQ2003A ULN2004A ULQ2004A