AMMC-5618 datasheet(2/8 Pages) AVAGO

2 / 8 page

Symbol

Parameters and Test Conditions

Unit

Min.

Typical

Max.

D1,VD2

Recommended Drain Supply Voltage

First stage Drain Supply Current

D1= 5V, VG1 = Open or Ground)

Second stage Drain Supply Current

D2= 5V, VG2 = Open or Ground)

D1 + ID2

Total Drain Supply Current

G1 = VG2 = Open or Ground, VD1= VD2 = 5 V)

107

140

ch-b

Thermal Resistance [2]

(Backside temperature (Tb) = 25

°C

°C/W

AMMC-5618 DC Specifications / Physical Properties[1]

Notes:

1. Backside temperature T

b = 25°C unless otherwise noted

2. Channel-to-backside Thermal Resistance (

ch-b) = 32°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy.

Thermal Resistance at backside temperature (T

b) = 25°C calculated from measured data.

Symbol

Parameters and Test Conditions

Unit

Min.

Typical Max.

21|

Small-signal Gain

12.5

14.5

D|S

21|

Small-signal Gain Flatness

± 0.3

Input Return Loss

out

Output Return Loss

12|

Isolation

-1dB

Output Power at 1dB Gain Compression @ 20 GHz

dBm

17.5

19.5

sat

Saturated Output Power (3dB Gain Compression) @ 20 GHz

dBm

20.5

OIP3

Output 3rd Order Intercept Point @ 20 GHz

dBm

21 / DT

Temperature Coefficient of Gain [4]

dB/

°C

-0.023

Noise Figure @ 20 GHz

4.4

6.5

AMMC-5618 RF Specifications[3,5]

b = 25°C, VDD= 5 V, IDD = 107 mA, Z0 = 50 Ω)

Notes:

3. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted.

4. Temperature Coefficient of Gain based on sample test

5. All tested parameters guaranteed with measurement accuracy ±1.5dB for S12, ±1dB for S11, S21, S22, P1dB and ±0.5dB for NF.

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