AMMC-6425 datasheet(2/7 Pages) AVAGO

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Gain at 23 GHz

P-1dB at 18 GHz

P-1dB at 28 GHz

TypicaldistributionofSmallSignalGainandOutputPower@P-1dB.Basedon1500partsampledoverseveralpro-

ductionlots.

AMMC-6425 RF Specifications [3, 4, 5] (TA= 25°C, Vd=5V, Id(Q)=900 mA, Zo=50 Ω)

AMMC-6425 DC Specifications/Physical Properties [1]

Notes:

1. AmbientoperationaltemperatureTA=25°Cunlessotherwisenoted.

2. Channel-to-backsideThermalResistance(θch-b)=10°C/WatTchannel(Tc)=107°Casmeasuredusinginfraredmicroscopy.ThermalResistance

atbacksidetemperature(Tb)=25°Ccalculatedfrommeasureddata.

Notes:

3. Small/Large-signaldatameasuredinwaferformTA=25°C.

4. 100%on-waferRFtestisdoneatfrequency=18,23,and28GHz.Statisticsbasedon1500partsample

5. Specificationsarederivedfrommeasurementsina50Ωtestenvironment.Aspectsoftheamplifierperformancemaybeimprovedovera

morenarrowbandwidthbyapplicationofadditionalconjugate,linearity,orpowermatching.

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

DrainSupplyCurrent

(underanyRFpowerdriveandtemperature)

(Vd=5.0V,VgsetforIdTypical)

900

1000

GateSupplyOperatingVoltage

(Id(Q)=900(mA))

-0.85

-0.7

-0.55

qch-b

ThermalResistance[2]

(Backsidetemperature,Tb=25°C)

°C/W

8.9

Symbol

Parameters and Test Conditions

Units

Minimum

Typical

Maximum

Sigma

Gain

Small-signalGain[4]

16.5

18.5

0.5

P-1dB

OutputPowerat1dBGainCompression

dBm

27.5

28.5

0.25

P-3dB

OutputPowerat3dBGainCompression

dBm

0.20

OIP3

ThirdOrderInterceptPoint;

Df=100MHz;Pin=-20dBm

dBm

0.72

RLin

InputReturnLoss[4]

-15

0.79

RLout

OutputReturnLoss[4]

-14

0.54

Isolation

Min.ReverseIsolation

-45

1.20

LSL

1. 1 1. 18 18. 19 19. 0 0. 1

LSL

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