2

Parameters/Condition

Symbol

Unit

Maximum

Drain to Ground Voltage

Vdd

V

5.5

Drain Current

Idd

mA

70

RF CW Input Power Max

Pin

dBm

0

Max channel temperature

Tch

C

+50

Storage temperature

Tstg

C

-65 +50

Maximum Assembly Temp

Tmax

C

260 for 20s

1. Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vdd, Idd and Pin

were determined at an ambient temperature of 25°C unless noted otherwise.

Parameter and Test Condition

Symbol

Unit

Minimum

Typical

Maximum

Drain Supply Current under any RF power drive and temp. (Vd=4.0 V)

Idd

mA

80

20

60

Drain Supply Voltage

Vd

V

3

4

5

θjc

°C/W

3.4

2. Ambient operational temperature TA=25°C unless noted

3. Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy.

Thermal Resistance at backside temp. (Tb) = 25°C calculated from measured data.

TA= 25°C, Idd=20mA, Vdd = 4.0 V, Zo=50 W

Parameters and Test Conditions

Symbol

Units

Freq.

(GHz)

High Output Power Configuration

Low Output Power Configuration

Minimum

Typical

Maximum Minimum Typical

Maximum

Drain Current

Idd

mA

20

95

Gain

dB

9, 2, 7 9

24

23

NF

dB

9, 2, 7

2.3

3.5

2.3

Output Power at dB Gain Compression

P-dB

dBm

5.5

4

Output Power at 3dB Gain Compression

P-3dB

dBm

7.5

6

Output Third Order Intercept Point

OIP3

dBm

29

27

Isolation

Iso

dB

-45

-45

Input Return Loss

RLin

dB

-0

-0

Output Return Loss

RLout

dB

-0

-0

4. Refer to characteristic plots for detailed individual frequency performance.

5. All tested parameters guaranteed with measurement accuracy ± 0.5dB for gain and ±0.3dB for NF in the high output power configuration.