IRF540 datasheet(1/8 Pages) STMICROELECTRONICS

tên linh kiện	IRF540

Giải thích chi tiết về linh kiện	N-CHANNEL 100V - 0.055Ω - 22A TO-220 LOW GATE CHARGE STripFET™II POWER MOSFET

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1/8

February 2003

NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &

IRF540

N-CHANNEL 100V - 0.055

Ω - 22A TO-220

LOW GATE CHARGE STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.055Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

TYPE

VDSS

RDS(on)

ID

IRF540

100 V

<0.077

Ω

22 A

1

2

3

TO-220

Ordering Information

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

1) ISD ≤22A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 12A, VDD = 30V

SALES TYPE

MARKING

PACKAGE

PACKAGING

IRF540

IRF540&

TO-220

TUBE

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

100

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuous) at TC = 25°C

22

A

ID

Drain Current (continuous) at TC = 100°C

15

A

IDM(•)

Drain Current (pulsed)

88

A

Ptot

Total Dissipation at TC = 25°C

85

W

Derating Factor

0.57

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

9

V/ns

EAS (2)

Single Pulse Avalanche Energy

220

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

Số phần tương tự - IRF540

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	IRF540	86Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
STMicroelectronics	IRF540	53Kb / 6P	N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET Apr-1998
Fairchild Semiconductor	IRF540	146Kb / 5P	N-Channel Power MOSFETs, 27 A, 60-100V
International Rectifier	IRF540	177Kb / 6P	HEXFET POWER MOSFET
Vishay Siliconix	IRF540	1Mb / 8P	Power MOSFET 16-Jun-08

More results

Mô tả tương tự - IRF540

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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	STP40NF10	479Kb / 11P	N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET Sep-2002
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	STB80NF10	317Kb / 14P	N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET 25-Jan-2007
	STB24NF10	421Kb / 14P	N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET 09-Aug-2006
	STP40NF10	238Kb / 12P	N-channel 100V - 0.025??- 50A TO-220 Low gate charge STripFET??II Power MOSFET 31-Jan-2007
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More results

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