LB1201AS datasheet(3/14 Pages) POINN

3 / 14 page

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

PRODUCT

INFORMATION

IGAS

Gate reverse current

VGG = -85 V, K and A terminals connected

TJ = 25°C

µA

TJ = 85°C

µA

IGT

Gate trigger current

IT = -1 A, tp(g) ≥ 20 µs, VGG = -50 V

dv/dt

Critical rate of rise of

off-state voltage

VGG = -50 V, (see Note 3)

-1000

V/µs

Anode-cathode off-

state capacitance

f = 1 MHz, Vd = 0.1 V, IG = 0, (see Note 4)

VD = 0 V

VD = -50 V

NOTES: 3. Linear rate of rise, maximum voltage limited to 80% VGG.

4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured

device terminals are a.c. connected to the guard terminal of the bridge.

thermal characteristics

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

RθJA

Junction to free air thermal resistance

Ptot = 0.8 W, TA = 25°C

5 cm

2, FR4 PCB

D Package

170

°C/W

P Package

125

PARAMETER MEASUREMENT INFORMATION

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC

electrical characteristics, -40°C

≤ T

J ≤ 85°C (unless otherwise noted) (continued)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

-v

TSM

TSP

(BO)

Quadrant I

Forward

Conduction

Characteristic

FSM (= |ITSM|)

FSP (= |ITSP|)

-i

Quadrant III

Switching

Characteristic

PM6XAAA

GK(BO)

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