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WLFO bảng dữ liệu(PDF) 2 Page - Amkor Technology

tên linh kiện WLFO
Giải thích chi tiết về linh kiện  Wafer level packaging applies similar processes as used in front-end wafer processing.
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nhà sản xuất  AMKOR [Amkor Technology]
Trang chủ  http://www.amkor.com
Logo AMKOR - Amkor Technology

WLFO bảng dữ liệu(HTML) 2 Page - Amkor Technology

  WLFO Datasheet HTML 1Page - Amkor Technology WLFO Datasheet HTML 2Page - Amkor Technology WLFO Datasheet HTML 3Page - Amkor Technology WLFO Datasheet HTML 4Page - Amkor Technology WLFO Datasheet HTML 5Page - Amkor Technology  
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WLFO
Applications
f
Mobile and consumer products, baseband, RF,
analog, power management
f
ASIC, MEMS, system solutions for medical, security,
encryption, DC/DC converter, radar and automotive
f
Electro-Optical WLSiP, solutions for M2M
communication and Internet of Things (IoT)
f
Extension of the technology platform to a wider field
of application areas is ongoing
Differentiation
f
Chip size independent package design with small
package size adder
f
High degree of package design freedom, fan-out
zone adaptable to customer needs
f
No restrictions in bump pitch, covering I/O gap
between IC and PCB
f
No laminate substrate required, shorter
interconnections, excellent electrical performance
f
Lower thermal resistance compared to Flip Chip in
Package (FCiP) and conventional substrate based
BGA
f
System-in-Package on Wafer-Level (WLSiP) and
Package-on-Package (PoP) solutions
f
Smaller footprint and thinner package than FCiP
BGA, no need for underfill
f
Reliable, miniaturized high performance package
f
RoHS and REACH compliant package
f
Cost effective due to 300 mm wafer batch
processing and no need of extra interposer
f
Highly simplified supply chain and manufacturing
infrastructure
f
Better board level reliability and backside protection
compared to WLCSP
Thermal
Strongly dependent on chip size to package size ratio,
RDL line width and thickness, number and position of
I/Os, type of backside protection. Example for
reference: Package size 8 x 8 mm, chip size 5 x 5 mm
shows thermal performance Rth junction-ambient =
32.5 K/W and Rth junction-case = 6.5 K/W.
Interconnect Level
BGA
FCiP
eWLB
Resistance @ DC [mO]
76
7.5
3.2
Resistance @ 5 GHz [mO]
375
41
15
Inductance [nH]
1.100
0.052
0.018
Package Level
BGA
FCiP
eWLB
Resistance @ DC [mO]
89
22
23
Resistance @ 5 GHz [mO]
629
248
91
Inductance [nH]
1.790
0.950
0.340
Electrical
Excellent performance data compared to conventional
wirebonded BGA and FCiP with significantly reduced
package parasitics.
Due to the very low inductance values, this package
type is excellent for high speed applications, such as RF
and radar, proven up to 81 GHz.
Cross Section
Fan-out area (mold)
Chip
Redistribution Layer (RDL)
A
B
C
Solder Ball
Dielectric
UBM (in CSPnl)
D
E
F
B
C
D
E
F
A



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