STP10NK80ZFP - STP10NK80Z - STW10NK80Z

Electrical characteristics

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Table 6.

Switching times

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

Turn-on Delay Time

Rise Time

(see Figure 20)

30

20

ns

ns

Turn-off Delay Time

Fall Time

(see Figure 20)

65

17

ns

ns

Table 7.

Gate-source zener diode

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

(1)

1.

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Gate-Source Breakdown

Voltage

Igs=±1mA

(Open Drain)

30

V

Table 8.

Source drain diode

Symbol

Parameter

Test condictions

Min

Typ.

Max

Unit

Source-drain current

9

A

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

36

A

(2)

2.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward on voltage

1.6

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

di/dt = 100A/µs,

645

6.4

20

ns

µC

A