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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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TIPL760 bảng dữ liệu(PDF) 2 Page - Power Innovations Ltd |
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TIPL760 bảng dữ liệu(HTML) 2 Page - Power Innovations Ltd |
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2 / 7 page  TIPL760, TIPL760A NPN SILICON POWER TRANSISTORS 2 AUGUST 1978 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCEO(sus) Collector-emitter sustaining voltage IC = 10 mA L = 25 mH (see Note 2) TIPL760 TIPL760A 400 450 V ICES Collector-emitter cut-off current VCE = 850 V VCE = 1000 V VCE = 850 V VCE = 1000 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 TC = 100°C TC = 100°C TIPL760 TIPL760A TIPL760 TIPL760A 50 50 200 200 µA ICEO Collector cut-off current VCE = 400 V VCE = 450 V IB = 0 IB = 0 TIPL760 TIPL760A 50 50 µA IEBO Emitter cut-off current VEB = 10 V IC = 0 1 mA hFE Forward current transfer ratio VCE = 5 V IC = 0.5 A (see Notes 3 and 4) 20 60 VCE(sat) Collector-emitter saturation voltage IB = 0.5 A IB = 0.8 A IB = 0.8 A IC = 2.5 A IC = 4 A IC = 4 A (see Notes 3 and 4) TC = 100°C 1.0 2.5 5.0 V VBE(sat) Base-emitter saturation voltage IB = 0.5 A IB = 0.8 A IB = 0.8 A IC = 2.5 A IC = 4 A IC = 4 A (see Notes 3 and 4) TC = 100°C 1.2 1.4 1.3 V ft Current gain bandwidth product VCE = 10 V IC = 0.5 A f = 1 MHz 12 MHz Cob Output capacitance VCB = 20 V IE = 0 f = 0.1 MHz 110 pF thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.56 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT tsv Voltage storage time IC = 4 A VBE(off) = -5 V IB(on) = 0.8 A (see Figures 1 and 2) 2.5 µs trv Voltage rise time 300 ns tfi Current fall time 250 ns tti Current tail time 150 ns txo Cross over time 400 ns tsv Voltage storage time IC = 4 A VBE(off) = -5 V IB(on) = 0.8 A TC = 100°C (see Figures 1 and 2) 3 µs trv Voltage rise time 500 ns tfi Current fall time 250 ns tti Current tail time 150 ns txo Cross over time 750 ns |
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