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MBR20200CT bảng dữ liệu(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

tên linh kiện MBR20200CT
Giải thích chi tiết về linh kiện  20.0 AMPS. Schottky Barrier Rectifiers
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nhà sản xuất  TSC [Taiwan Semiconductor Company, Ltd]
Trang chủ  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBR20200CT bảng dữ liệu(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  MBR20200CT Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd MBR20200CT Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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MBR2035CT THRU MBR20200CT
20.0 AMPS. Schottky Barrier Rectifiers
Voltage Range
35 to 200 Volts
Current
20.0 Amperes
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220 molded plastic
Terminals: Leads solderable per MIL-STD-750, Method
2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight:
0.08 ounce, 2.24 grams
TO-220
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBR20
35CT
MBR20
45CT
MBR20
50CT
MBR20
60CT
MBR20
100CT
MBR20
150CT
MBR20
200CT
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
35
45
50
60
100
150
200
V
Maximum RMS Voltage
VRMS
24
31
35
42
70
105
140
V
Maximum DC Blocking Voltage
VDC
35
45
50
60
100
150
200
V
Maximum Average Forward Rectified Current
at TC=135
oC
I(AV)
20
A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=135
oC
IFRM
20.0
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
1.0
A
Maximum Instantaneous Forward Voltage at (Note 2)
IF=10A, TC=25
OC
IF=10A, TC=125
OC
IF=20A, TC=25
OC
IF=20A, TC=125
OC
VF
-
0.57
0.84
0.72
0.80
0.70
0.95
0.85
0.85
0.75
0.95
0.85
0.99
0.87
1.23
1.10
V
0.1
0.15
1.0
Maximum Instantaneous Reverse Current @ Tc=25
℃
at Rated DC Blocking Voltage
@ Tc=125
℃
IR
15
20
mA
mA
Voltage Rate of Change, (Rated VR)
dV/dt
10,000
V/uS
Typical Junction Capacitance
Cj
400
320
pF
Typical Thermal Resistance Per Leg (Note 3)
R
θJC
1.0
2.0
℃/W
Operating Junction Temperature Range
TJ
-65 to +150
℃
Storage Temperature Range
TSTG
-65 to +175
℃
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate.


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