MHW10186N datasheet(2/5 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MHW10186N

Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Composite Second Order

(Vout = +48 dBmV/ch., Worst Case)

79-Channel FLAT

(Vout = +46 dBmV/ch., Worst Case)

112-Channel FLAT

(Vout = +44 dBmV/ch., Worst Case)

132-Channel FLAT

CSO79

CSO112

CSO132

—

-72

-65

-67

-64

-61

-60

dBc

Cross Modulation Distortion @ Ch 2

(Vout = +48 dBmV/ch., FM = 55 MHz)

79-Channel FLAT

(Vout = +46 dBmV/ch., FM = 55 MHz)

112-Channel FLAT

(Vout = +44 dBmV/ch., FM = 55 MHz)

132-Channel FLAT

XMD79

XMD112

XMD132

—

-58

—

dBc

Composite Triple Beat

(Vout = +48 dBmV/ch., Worst Case)

79-Channel FLAT

(Vout = +46 dBmV/ch., Worst Case)

112-Channel FLAT

(Vout = +44 dBmV/ch., Worst Case)

132-Channel FLAT

CTB79

CTB112

CTB132

—

-64

-61

-62

-60

-58

dBc

Noise Figure

50 MHz

870 MHz

1000 MHz

—

3.7

4.1

DC Current (VDC = 24 V, TC = -20° to +100°C)

IDC

230

250

265

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