JDV2S42FS

1

2023-03-08

Rev.1.0

© 2023

Toshiba Electronic Devices & Storage Corporation

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

JDV2S42FS

1. Applications

VCO for UHF Band Radio

•

High capacitance ratio: C2 V / C10 V = 2.4 (typ.)

•

Low series resistance: rs = 0.44 Ω (typ.)

•

Useful for small size tuner.

2. Absolute Maximum Ratings (Ta = 25 °C)

Table 2.1

Characteristics

Symbol

Rating

Unit

Reverse voltage

VR

15

V

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

-55 to 125

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshib

a Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

3. Electrical Characteristics (Ta = 25°C)

Table 3.1

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

VR

IR = 1 µA

15

-

-

V

Reverse current

IR

VR = 15 V

-

-

35

nA

Capacitance

C2V

VR = 2 V, f = 1 MHz

3.8

-

4.7

pF

Capacitance

C10V

VR = 10 V, f = 1 MHz

1.5

-

2.0

pF

Capacitance ratio

C2V / C10V

-

2.0

2.4

-

-

Series resistance

rs

VR = 1 V, f = 470 MHz

-

0.44

0.6

Ω

Unit: mm

SOD-923

JEDEC

-

JEITA

TOSHIBA

1-1AH1A

Weight: 0.7mg (typ.)

Start of commercial production

2023-09