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PD57030STR-E bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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PD57030STR-E bảng dữ liệu(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() August 2006 Rev 1 1/18 18 PD57030-E PD57030S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 30W with 14dB gain @ 945MHz / 28V ■ New RF plastic package Description The PD57030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. PD57030 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57030’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Pin connection PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Gate Source Drain www.st.com Order codes Part number Package Packing PD57030-E PowerSO-10RF (formed lead) Tube PD57030S-E PowerSO-10RF (straight lead) Tube PD57030TR-E PowerSO-10RF (formed lead) Tape and reel PD57030STR-E PowerSO-10RF (straight lead) Tape and reel |
Số phần tương tự - PD57030STR-E |
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Mô tả tương tự - PD57030STR-E |
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