OVSR9ABCR8 datasheet(2/4 Pages) OPTEK

2 / 4 page

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747

FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue A

10/05

Page 2 of 4

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

Amber Side-Emitting SMD LED

OVSR9ABCR8

Storage Temperature Range

-40 ~ +100°C

Operating Temperature Range

-40 ~ +100°C

Junction Temperature

110°C

Reverse Voltage

5 V

Continuous Forward Current

50 mA

Peak Forward Current (10% Duty Cycle, PW

VHF

200 mA

Power Dissipation

130 mW

Junction/Ambient1

500°C/W

Junction/Solder Point

350°C/W

Absolute Maximum Ratings

TA = 25o C unless otherwise noted

Electrical Characteristics

TA = 25o C unless otherwise noted

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

CONDITIONS

Luminous Intensity

224

350

----

mcd

IF = 20 mA

Forward Voltage

----

2.3

2.6

IF = 20 mA

Reverse Current

----

µA

VR = 5 V

Dominant Wavelength

584

591

596

IF = 20 mA

2 ½

50% Power Angle

----

120

----

deg

IF = 20 mA

Standard Bins (IF = 20mA)

Lamps are sorted to luminous intensity (IV) and dominant wavelength ( D) bins shown.

Orders for OVSR9ABCR8 may be filled with any or all bins contained as below.

Notes:

1. All ranks will be included per delivery. Rank ratio will be based on the chip distribution.

2. To designate luminous intensity ranks, please contact OPTEK.

560

450

355

280

224

Luminous intensity is at

S2 bin or above.

Dominant Wavelength (nm)

584

596

Note:

1. Rth test condition: Mounted on PCBoard FR 4 (pad size

2).

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