F5H2201

No. A0403-2/5

Electrical Characteristics at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=40V, IE=0A

10

µA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

10

µA

DC Current Gain

hFE1VCE=2V, IC=330mA

200

560

hFE2VCE=2V, IC=10A

50

Gain-Bandwidth Product

fT

VCE=10V, IC=2A

195

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

85

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=7.5A, IB=375mA

250

500

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=7.5A, IB=375mA

1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=100µA, IE=0A

60

V

Collector-to-Emitter Breakdown Voltage

V(BR)CES

IC=100µA, RBE=0Ω

60

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

50

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=100µA, IC=0A

6

V

Turn-ON Time

ton

See specified Test Circuit.

52

ns

Storage Time

tstg

See specified Test Circuit.

560

ns

Fall Time

tf

See specified Test Circuit.

37

ns

Note : The specifications shown above are for each individual transistor.

Package Dimensions

Electrical Connection

unit : mm (typ)

7526-001

Switching Time Test Circuit

1 : Base1(TR1)

2 : Emitter1(TR1)

3 : Collector(Common)

4 : Base2(TR2)

5 : Emitter2(TR2)

SANYO : TO-220FI5H

10.0

4.5

2.8

2.54

1.27

2.75

2.4

1.27

2.54

12

3

4 5

0.9

0.7

0.5

3.2

1

2

3

4

5

1 : Base1(TR1)

2 : Emitter1(TR1)

3 : Collector(Common)

4 : Base2(TR2)

5 : Emitter2(TR2)

Top view

TR1

TR2

VR

RB

VCC=25V

IC=20IB1= --20IB2=5A

VBE= --5V

++

50Ω

RL

INPUT

OUTPUT

100µF

470µF

PW=20µs

IB1

D.C.≤1%

IB2