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P4C189 bảng dữ liệu(PDF) 3 Page - Pyramid Semiconductor Corporation

tên linh kiện P4C189
Giải thích chi tiết về linh kiện  HIGH SPEED 16 x 4 STATIC CMOS RAM WITH INVERTING OUTPUTS
PDF  8 Pages
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nhà sản xuất  PYRAMID [Pyramid Semiconductor Corporation]
Trang chủ  http://www.pyramidsemiconductor.com
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P4C189 bảng dữ liệu(HTML) 3 Page - Pyramid Semiconductor Corporation

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P4C189
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Document # SRAM100 Rev OR
addressed word is read out on the inverting outputs (O
0
through O
3). The outputs of the memory go to an inactive
high impedance state whenever chip select (CS) is HIGH,
or during the write operation when write enable (WE) is
LOW.
An active LOW write enable (WE) controls the writing/
reading operation of the memory. When chip select (CS)
and write enable (WE) are LOW, the information on data
inputs (D
0 through D3) is written into the addressed memory
word. Reading is performed with chip select (CS) LOW and
write enable (WE) HIGH. The information stored in the
FUNCTIONALDESCRIPTION
Notes: H = HIGH
L = Low
X = Don't Care
HIGH Z = Implies outputs are disabled or off. This condition
is defined as high impedance state.
Mode
CS
CS
CS
CS
CS
WE
WE
WE
WE
WE
Output
Standby
H
X
High Z
Read
L
H
D
OUT
Write
L
L
High Z
TRUTH TABLE
TIMING WAVEFORM OF READ CYCLE NO. 1(5)
Sym.
t
RC
t
AA
t
AC
t
HZ
Read Cycle Time
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
-35
Unit
ns
ns
ns
ns
ns
ns
AC CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
Min
35
2
2
Max
35
15
10
Parameter
Address Access Time
t
OH
t
LZ



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