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B14NK60Z bảng dữ liệu(PDF) 5 Page - STMicroelectronics

tên linh kiện B14NK60Z
Giải thích chi tiết về linh kiện  N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESH™ Power MOSFET
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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B14NK60Z bảng dữ liệu(HTML) 5 Page - STMicroelectronics

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STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z Electrical characteris-
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2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
600
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±30V
±
10
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 100µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 6A
0.45
0.5
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS =15V, ID = 6A
11
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
2220
240
57
pF
pF
pF
Coss eq
(2)
.
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0V to 480V
122
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=480V, ID = 12A
VGS =10V
75
13.2
38.6
nC
nC
nC



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