BC55xPAS series

60 V, 1 A NPN medium power transistors

9 October 2024

Product data sheet

1. General description

NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D)

leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and

visible and solderable side pads.

2. Features and benefits

• High collector current capability IC and ICM

• Reduced Printed-Circuit Board (PCB) area requirements

• Exposed heat sink for excellent thermal and electrical conductivity

• Two current gain selections

• Leadless very small SMD plastic package with medium power capability

• Suitable for Automatic Optical Inspection (AOI) of solder joint

3. Applications

• Linear voltage regulators

• Battery driven devices

• MOSFET drivers

• High-side switches

• Power management

• Amplifiers

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter

voltage

open base

-

-

60

V

IC

collector current

-

-

1

A

ICM

peak collector current

single pulse; tp ≤ 1 ms

-

-

2

A

DC current gain

BC55PAS

[1]

63

-

250

BC55-10PAS

[1]

63

-

160

hFE

BC55-16PAS

VCE = 2 V; IC = 150 mA; Tamb = 25 °C

[1]

100

-

250

[1] pulsed; tp ≤ 300 µs; δ ≤ 0.02