2SC6094

No. A0410-1/4

Applications

•

DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.

Features

•

Adoption of FBET, MBIT process.

•

High current capacitance.

•

Low collector-to-emitter saturation voltage.

•

High-speed switching.

•

High allowable power dissipation.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

100

V

Collector-to-Emitter Voltage

VCES

100

V

Collector-to-Emitter Voltage

VCEO

60

V

Emitter-to-Base Voltage

VEBO

6.5

V

Collector Current

IC

3A

Collector Current (Pulse)

ICP

5A

Base Current

IB

600

mA

Collector Dissipation

PC

1.3

W

Tc=25

°C

3.5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=50V, IE=0A

1

µA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

1

µA

DC Current Gain

hFE

VCE=2V, IC=100mA

300

600

Marking : QE

Continued on next page.

Ordering number : ENA0410

70306 / 53006EA MS IM TB-00002379

2SC6094

NPN Epitaxial Planar Silicon Transistor

High-Current Switching Applications

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Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.