5STP29H2001 datasheet(2/6 Pages) ABB

2 / 6 page

5STP 29H2201

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1067-01 March 05

page 2 of 6

On-state

Maximum rated values

Parameter

Symbol Conditions

min

typ

max

Unit

Average on-state current

IT(AV)M

Half sine wave, Tc = 70°C

2855

RMS on-state current

IT(RMS)

4484

Peak non-repetitive surge

current

ITSM

45×10

Limiting load integral

tp = 10 ms, Tvj = 125 °C,

VD = VR = 0 V

10.13×10

Peak non-repetitive surge

current

ITSM

48.1×10

Limiting load integral

tp = 8.3 ms, Tvj = 125 °C,

VD = VR = 0 V

9.6×10

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

On-state voltage

IT = 4000 A, Tvj = 125 °C

1.43

Threshold voltage

V(T0)

1.001

Slope resistance

IT = 3500 A - 10800 A, Tvj= 125 °C

0.107

Ω

Holding current

Tvj = 25 °C

170

Tvj = 125 °C

Latching current

Tvj = 25 °C

1500

Tvj = 125 °C

1000

Switching

Maximum rated values

Parameter

Symbol Conditions

min

typ

max

Unit

Critical rate of rise of on-

state current

di/dtcrit

Cont.

f = 50 Hz

200

A/µs

Critical rate of rise of on-

state current

di/dtcrit

Tvj = 125 °C,

IT = IT(AV),

≤ 1210 V,

IFG = 2 A, tr = 0.3 µs

Cont.

f = 1 Hz

1000

A/µs

Circuit-commutated turn-off

time

Tvj = 125°C, ITRM = 4000 A,

VR = 100 V, diT/dt = -12.5 A/µs,

≤ 0.67⋅V

DRM, dvD/dt = 50V/µs

250

µs

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Recovery charge

Qrr

Tvj = 125°C, ITRM = 4000 A,

VR = 100 V,

diT/dt = -12.5 A/µs

3200

µAs

Gate turn-on delay time

tgd

VD = 0.4

⋅V

RM, IFG = 2 A,

tr = 0.3 µs, Tvj = 25 °C

µs

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