5STP 17F2201

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1063-01 March 05

page 4 of 6

0

1000

2000

3000

4000

5000

6000

7000

8000

9000

10000

0

1

2

3

4

V

25°C 125°C

10

15

20

25

30

35

40

1

10

100

t ( m s )

2

2,5

3

3,5

4

4,5

5

∫i

Fig. 2

Max. on-state voltage characteristics

Fig. 3

Surge forward current vs. pulse length. Half

0

1

2

3

4

5

6

7

0

0,5

1

+125 °C

+25 °C

-40 °C

V

GTmin

DC = P

GAVm

0

2

4

6

8

10

12

14

0

2

4

6

8

10

12

I

DC = P

GAVm

10ms

1ms

500µs

V

FGM

Fig. 4

Gate trigger characteristics

Fig. 5

Gate trigger characteristics