AD8002ARZ-R7 datasheet(5/21 Pages) AD

5 / 21 page

Data Sheet

AD8002

Rev. E | Page 5 of 21

ABSOLUTE MAXIMUM RATINGS

Table 2.

Parameter

Rating

Supply Voltage

13.2 V

Internal Power Dissipation1

SOIC (R)

0.9 W

MSOP (RM)

0.6 W

Input Common-Mode Voltage

±VS

Differential Input Voltage

±1.2 V

Output Short-Circuit Duration

Observe power

derating curves

Storage Temperature Range

−65°C to +125°C

Operating Temperature Range

−40°C to +85°C

Lead Temperature (Soldering 10 sec)

300°C

Specification is for device in free air:

8-lead SOIC: θJA = 155°C/W.

8-lead MSOP: θJA = 200°C/W.

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the

AD8002 is limited by the associated rise in junction temper-

ature. The maximum safe junction temperature for plastic

encapsulated devices is determined by the glass transition

temperature of the plastic, approximately 150°C. Exceeding

this limit temporarily may cause a shift in parametric perfor-

mance due to a change in the stresses exerted on the die by

the package. Exceeding a junction temperature of 175°C for

an extended period can result in device failure.

Although the AD8002 is internally short-circuit protected, this

may not be sufficient to guarantee that the maximum junction

temperature (150°C) is not exceeded under all conditions.

To ensure proper operation, it is necessary to observe the

maximum power derating curves.

2.0

–

1.5

0.5

–40

1.0

–10

–20

–30

AMBIENT TEMPERATURE (°C)

8-LEAD SOIC PACKAGE

TJ = 150°C

8-LEAD MSOP

PACKAGE

Figure 3. Maximum Power Dissipation vs. Ambient Temperature

ESD CAUTION

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