2

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

800

V

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 800 V

1

µA

VGS = 0 V, VDS = 800 V, TC = 125 °C(1)

50

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±20 V

±1

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3.0

3.5

4.0

V

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 7 A

197

220

mΩ

1. Specified by design, not tested in production.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 400 V, f = 1 MHz, VGS = 0 V

-

1350

-

pF

Coss

Output capacitance

-

20

-

pF

Co(er)(1)

Equivalent capacitance energy

related

VDS = 0 to 640 V, VGS = 0 V

-

25

-

pF

Co(tr)(2)

Equivalent capacitance time

related

-

139

-

pF

RG

Intrinsic gate resistance

f = 1 MHz , ID = 0 A

-

1.8

-

Ω

Qg

Total gate charge

VDD = 640 V, ID = 7 A, VGS = 0 to 10 V

(see Figure 18. Test circuit for gate

charge behavior)

-

25.9

-

nC

Qgs

Gate-source charge

-

6.9

-

nC

Qgd

Gate-drain charge

-

8.4

-

nC

1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 V to the stated

value.

2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 V to the stated

value.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 400 V, ID = 7 A,

RG = 4.7 Ω, VGS = 10 V

see (Figure 16. Test circuit for resistive

load switching times and

Figure 17. Switching time waveform)

-

16

-

ns

tr

Rise time

-

5.3

-

ns

td(off)

Turn-off delay time

-

47.8

-

ns

tf

Fall time

-

12

-

ns

STF80N240K6

Electrical characteristics

DS13794 - Rev 3

page 3/13