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MBR30170MFS bảng dữ liệu(PDF) 3 Page - ON Semiconductor |
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MBR30170MFS bảng dữ liệu(HTML) 3 Page - ON Semiconductor |
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3 / 6 page ![]() MBR30170MFS www.onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 170 V Continuous Forward Current (TC = 162°C, DC) IF(DC) 30 A Peak Repetitive Forward Current (TC = 159°C, Square Wave, Duty = 0.5) IFRM 60 A Non−Repetitive Peak Surge Current Sinusoidal Halfwave, 8.3 ms IFSM 540 A Square wave, 1 ms 700 Square wave, 100 ms 1200 Non−Repetitive Avalanche Energy (TJ = 25°C) EAS 280 mJ Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature Range (Note 1) TJ −55 to +175 °C ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient dPD/dTJ < 1/RqJA The reliability may be affected by leakage current when device operates near to rated voltage and maximum junction temperature. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 55 °C/W Thermal Resistance, Junction−to−Case Bottom (Note 2) RqJCB 0.65 °C/W Thermal Characterization, Junction−to−Case Top (Note 2) yJCT 3.5 °C/W Thermal Characterization, Junction−to−Lead of Cathode (Note 2) yJLC 1.4 °C/W 2. Assume 600 mm2, 1 oz. copper bond pad on a FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Instantaneous Forward Voltage (IF = 15 A, TJ = 25°C) (IF = 15 A, TJ = 125°C) (IF = 30 A, TJ = 25°C) (IF = 30 A, TJ = 125°C) VF 0.76 0.62 0.81 0.68 − − 0.89 0.74 V Instantaneous Reverse Current (VR = Rated DC Voltage, TJ = 25°C) (VR = Rated DC Voltage, TJ = 125°C) IR 0.5 1.0 50 10 mA mA Junction Capacitance (VR = 1 V, TJ = 25°C, f = 1 MHz) CJ 821 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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