NMOS Specifications T

J = 25ºC, unless otherwise noted

Parameter

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

Static Parameters

Drain-Source Breakdown Voltage

V

(BR)DSS

V

GS = 0V, ID = 250µA

60

--

--

V

Zero Gate Voltage Drain Current

I

DSS

V

DS = 60V, VGS = 0V, TJ = 25º

C

--

--

1

μA

Gate-Source Leakage

I

GSS

V

GS = ±20V

--

--

±100

nA

Gate-Source Threshold Voltage

V

GS(th)

V

DS = VGS, ID = 250µA

1.0

2.5

V

Drain-Source On-Resistance

R

DS(on)

V

GS = 10V, ID = 6A

--

30

m

Ω

V

GS = 4.5V, ID = 4A

--

33

Forward Transconductance

g

FS

VDS=5V,ID=6A

--

12.5

--

S

Dynamic Parameters

Input Capacitance

C

iss

V

GS = 0V,

V

DS = 30V,

f = 1.0MHz

--

1350

--

pF

Output Capacitance

C

oss

--

54

--

Reverse Transfer Capacitance

C

rss

--

51

--

Total Gate Charge

Q

g

V

DS = 30V,

I

D = 5A,

V

GS = 10V

--

22

--

nC

Gate-Source Charge

Q

gs

--

3.3

--

Gate-Drain Charge

Q

gd

--

5.2

--

Turn-on Delay Time

t

d(on)

V

DD = 30V,

I

D = 5A,

R

G = 3Ω

--

5.2

--

ns

Turn-on Rise Time

t

r

--

3

--

Turn-off Delay Time

t

d(off)

--

17

--

Turn-off Fall Time

t

f

--

2.5

--

Drain-Source Body Diode Characteristics

Body Diode Voltage

V

SD

T

J = 25º

C, I

SD = 6A, VGS = 0V

--

--

1.2

V

Continuous Body Diode Current

I

S

T

C = 25º

C

--

--

6

A

Notes

1.

Repetitive Rating: Pulse width limited by maximum junction temperature

2.

Identical low side and high side switch with identical R

G

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P2804NVG

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