2SC5808

No.7079-1/4

Features

•

High breakdown voltage.

•

High speed switching.

•

Wide ASO.

•

Adoption of MBIT process.

Package Dimensions

unit : mm

2045B

Package Dimensions

unit : mm

2044B

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN7079

2SC5808

Switching Power Supply Applications

[2SC5808]

O2501 TS IM TA-3412

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

NPN Triple Diffused Planar Silicon Transistor

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

5.0

6.5

0.85

0.7

0.6

0.5

1.2

2.3

0.5

1

23

4

2.3

2.3

[2SC5808]

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

6.5

2.3

0.5

5.0

0.85

0.5

1.2

0 to 0.2

2.3

2.3

0.6

12

4

3