SSF2445CU

©Silikron Microelectronics (Suzhou) Co.,Ltd

www.silikron.com

Version: 1.1

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Main Product Characteristics

Features and Benefits

Description

Absolute Max Rating

Symbol

Parameter

Max.

Units

N-channel

P-channel

ID @ TC = 25°C

Continuous Drain Current, VGS @ 4.5V ①

4.9

-2.9

A

IDM

Pulsed Drain Current ②

18

-11.6

PD @TC = 25°C

Power Dissipation ③

1.76

1.76

W

VDS

Drain-Source Voltage

20

-20

V

VGS

Gate-to-Source Voltage

±8

±8

V

TJ

TSTG

Operating Junction and Storage Temperature Range

-55 to +150

-55 to +150

°C

N-ch

P-ch

VDSS

20V

-20V

RDSon(typ.)

22 m

Ω

62 m

Ω

ID

4.9A

-2.9A

Marking and Pin

Assignments

Schematic Diagram

SOT23-6



Advanced trench MOSFET process technology



Special designed for load switching and buttery

protection applications



150°C operating temperature

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the

on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely

efficient and reliable device for use in load switching and a wide variety of other applications