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MCP1403-E/P bảng dữ liệu(PDF) 11 Page - Microchip Technology

tên linh kiện MCP1403-E/P
Giải thích chi tiết về linh kiện  4.5A Dual High-Speed Power MOSFET Drivers
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© 2007 Microchip Technology Inc.
DS22022B-page 11
MCP1403/4/5
Placing a ground plane beneath the MCP1403/4/5 will
help as a radiated noise shield as well as providing
some heat sinking for power dissipated within the
device.
4.5
Power Dissipation
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
4.5.1
CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load, and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is:
4.5.2
QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw depends upon the state of the input pin.
The MCP1403/4/5 devices have a quiescent current
draw when both inputs are high of 1.0 mA (typ) and
0.15 mA (typ) when both inputs are low. The quiescent
power dissipation is:
4.5.3
OPERATING POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions because for a very
short period of time both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
leads to a power dissipation describes as:
PT
PL PQ PCC
++
=
Where:
PT = Total power dissipation
PL = Load power dissipation
PQ = Quiescent power dissipation
PCC = Operating power dissipation
PL
fCT
×
VDD
2
×
=
Where:
f = Switching frequency
CT = Total load capacitance
VDD = MOSFET driver supply voltage
PQ
IQH DIQL
1 D
–
()
×
+
×
() V
DD
×
=
Where:
IQH = Quiescent current in the high state
D = Duty cycle
IQL = Quiescent current in the low state
VDD = MOSFET driver supply voltage
PCC
CC f
×
VDD
×
=
Where:
CC = Cross-conduction constant (A*sec)
f = Switching frequency
VDD = MOSFET driver supply voltage



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