Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

FEATURES

•

10µs Short Circuit Withstand

•

Non Punch Through Silicon

•

Isolated Copper Base plate

•

Lead Free construction

APPLICATIONS

•

High Power Inverters

•

Motor Controllers

The Powerline range

of

high

power

modules

includes half bridge, chopper, dual, single and bi-

directional switch configurations covering voltages

from 600V to 3300V and currents up to 3600A.

The DIM2400ESS12-A000 is a single switch 1200V,

n channel enhancement mode, insulated

gate

bipolar transistor (IGBT) module. The IGBT has a

wide reverse bias safe operating area (RBSOA) plus

full 10

µs short circuit withstand.

The module incorporates an electrically isolated

base plate and low inductance construction enabling

circuit designers to optimise circuit layouts and

utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM2400ESS12-A000

Note: When ordering, please use the whole part number.

KEY PARAMETERS

1200V

*

(typ)

2.2V

(max)

2400A

(max)

4800A

Fig. 1 Single switch circuit diagram

Outline type code: E

(See package details for further information)

Fig. 2 Package

DS5840-1.1 June 2005 (LN24075)

DIM2400ESS12-A000

Single Switch IGBT Module